Manufacturing of Carbon Nanotube Thin Film Transistor Backplanes and Display Integration Thereof

A method for manufacturing a single-walled carbon nanotube thin film transistor backplane comprising:

• providing a substrate;
• patterning a gate electrode and dielectric layer on the substrate to form a
• patterning at least an n+ layer, and a drain and a source electrode on the dielectric layer using a photomask and photolithography process such that the portion of the dielectric overlapping the channel is exposed;
• depositing a back-layer comprised of a thin-film layer of single-walled carbon nanotubes on said n+ layer, drain and electrode layer and dielectric layer;
• and
• depositing a passivation layer on the back-layer.

A system configured to deposit a single-walled carbon nanotube thin film transistor backplane comprising:

• a plurality of printer heads mounted in association with a moving station;
• the plurality of printer heads in fluid communication with a solution of an aqueous solution of single-walled carbon nanotubes for depositing a thin film of the single-walled carbon nanotubes atop a substrate disposed on the moving station;
• and
• wherein the printer heads are integrated with a photomask and photolithography process for patterning and forming at least a drain and a source electrode, a dielectric, one or more top-gated electrodes and one or more pixel electrodes atop the deposited thin film.