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US 2018/0323387 A1Published application
Unipolar N- or P-Type Carbon Nanotube Transistors and Methods of Manufacture Thereof
OwnerHuaping Liinventor
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Abstract
Devices, materials and methods for producing and integrating carbon nanotubes (CNT) into TFTs to form unipolar CNT TFTs are provided. CNT TFTs comprise doped layers between the CNT active layer and the source/drain electrodes capable of providing a carrier-trapping function such that unwanted carrier charge injection is suppressed between the electrodes allowing for the unipolar operation of CNT TFTs. Methods and apparatus for forming unipolar N- or P-type SWCNT TFTs are also provided.
Claims29
A unipolar thin film transistor comprising
- at least a first dielectric layer;
- at least one carbon nanotube active layer, at least a portion of which is in contact with the at least first dielectric layer;
- at least one gate electrode such that the at least first dielectric layer is interposed between the one carbon nanotube active layer and the at least one gate electrode;
- at least a drain and a source electrode disposed over or under the at least one carbon nanotube active layer
- at least one n+ or p+ doped layer disposed between the at least one carbon nanotube active layer and the drain and source electrodes, such that the TFT demonstrates unipolar characteristics.
2 more elements
A method for manufacturing a unipolar thin film transistor comprising one of either a bottom-gate or a top-gate process:
- wherein the bottom-gate process comprises:
- providing a substrate,
- patterning a gate electrode and dielectric layer on the substrate,
- depositing an active-layer comprised of a thin-film layer of single-walled carbon nanotubes on said dielectric layer,
- patterning at least a doped layer, and a drain and a source electrode either below or above the active-layer such that the portion of the active-layer overlapping the channel is exposed, and such that the doped layer is disposed between the drain and the source electrode and the active-layer, and
- wherein the doped layer is one of either n+ or p+ doped, such that the TFT demonstrates unipolar characteristics;
- and
- wherein the top-gate process comprises:
- providing a substrate;
- depositing a dielectric layer on the substrate;
- depositing an active-layer comprised of a thin-film layer of single-walled carbon nanotubes on the dielectric layer;
- patterning a gate electrode and dielectric layer on the active layer to form a channel;
- patterning at least a doped layer, and a drain and a source electrode either below or above the active-layer using a photomask and photolithography process such that the portion of the dielectric overlapping the channel is exposed;
- and
- wherein the doped layer is one of either n+ or p+ doped, such that the TFT demonstrates unipolar characteristics.
12 more elements
Dependencies are inferred from the claim text.