Electronic device
AssigneeSK hynix Inc.
InventorsYang-Kon Kim, Ku-Youl Jung, Jong-Koo Lim, Jae-Hyoung Lee
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Abstract
An electronic device may include a semiconductor memory, and the semiconductor memory may include an MTJ (Magnetic Tunnel Junction) structure including a free layer having a variable magnetization direction, a pinned layer having a fixed magnetization direction, and a tunnel barrier layer interposed between the free layer and the pinned layer; an under layer disposed under the MTJ structure; and a perpendicular magnetic anisotropy increasing layer disposed below the under layer and including a material having a different crystal structure from the under layer.
Claims20
An electronic device comprising a semiconductor memory, wherein the semiconductor memory comprises:
- a magnetic tunnel junction (MTJ) structure including a free layer having a variable magnetization direction perpendicular to the free layer, a pinned layer having a fixed magnetization direction perpendicular to the pinned layer, and a tunnel barrier layer interposed between the free layer and the pinned layer;
- an under layer disposed under the MTJ structure;
- and
- a perpendicular magnetic anisotropy increasing layer disposed below the under layer and including a material having a different crystal structure from the under layer.
An electronic device comprising a semiconductor memory, wherein the semiconductor memory comprises:
- a substrate;
- memory cells formed over the substrate, each memory cell including a magnetic layer, an under layer disposed below the magnetic layer and a perpendicular magnetic anisotropy increasing layer disposed below the under layer and structured to have a crystal structure that is different from a crystal structure of the under layer to enhance a perpendicular magnetic anisotropy of the free layer;
- and
- switching elements formed over the substrate and coupled to the memory cells to select or de-select the memory cells.
Dependencies are inferred from the claim text.