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US 2018/0323359 A1Published application
Mechanical and thermal electric generators
AssigneeGeorge Mason University
InventorsQiliang Li, Sheng Yu, Abbas Arab
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Abstract
Devices for generating electrical energy along with methods of fabrication and methods of use are disclosed. An example device can comprise one or more layers of a transition metal dichalcogenide material. An example device can comprise a mechano-electric generator. Another example device can comprise a thermoelectric generator.
Claims30
A device comprising:
- a first portion of a layer comprising a p-type transition metal dichalcogenide material, the first portion having a first side and a second side opposite the first side;
- a second portion of the layer comprising a n-type transition metal dichalcogenide material, the second portion having a third side and a fourth side opposite the third side, wherein the first side of the first portion and the third side of the second portion form a PN junction;
- a first electrode of the layer adjacent to the second side of the first portion of the layer;
- and
- a second electrode of the layer adjacent to the fourth side of the second portion of the layer, wherein the layer is configured to provide electrical energy via one or more of the first electrode or the second electrode in response to receiving mechanical energy at the layer.
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A device comprising:
- a first nanostructure comprising a n-type transition metal dichalcogenide material;
- a second nanostructure comprising a p-type transition metal dichalcogenide material;
- an electrical interconnect coupling the first nanostructure to the second nanostructure;
- a first electrode coupled to the first nanostructure;
- and
- a second electrode coupled to the second nanostructure, wherein the first nanostructure and the second nanostructure are together configured to provide electrical energy via one or more of the first electrode or the second electrode in response to receiving thermal energy at one or more of the first nanostructure and the second nanostructure.
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A method comprising:
- forming a first transition metal dichalcogenide material layer;
- forming a first insulating layer on top of the first transition metal dichalcogenide material layer;
- forming a second transition metal dichalcogenide material layer on top of the second insulating layer, wherein the first transition metal dichalcogenide material layer, the second transition metal dichalcogenide material layer, the first insulating layer, and the second insulating layer are formed as part of a wafer;
- dividing the wafer into a plurality of subsections;
- and
- assembling the plurality of subsections of the wafer into an array of components of a circuit.
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Dependencies are inferred from the claim text.