Sealed semiconductor light emitting device

Abstract

A light-emitting device is described herein. The device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region. The device also includes a metal layer with openings formed therein and filled with an insulating material. The openings separate the metal layer into a first portion that is electrically isolated from a second portion. The first portion is coupled to the n-type region and the second portion coupled to the p-type region. The device also includes conductive stacks. A first surface of each of the conductive stacks contacts a surface of the metal layer opposite the semiconductor structure. A respective gap is positioned between each of the conductive stacks. A body is in direct contact with a second surface of each of the conductive stacks that is opposite the first surface.

Dependencies are inferred from the claim text.