Light emitting diode including wavelength conversion layers

A method for producing at least one light emitting diode, including at least:

• production of a structure for emitting light at at least one first wavelength λ1, comprising a p-n junction in which is arranged an active zone including at least one first quantum well formed by a first emissive layer comprising InX1Ga1-X1N arranged between two first barriers;
• production of a conversion structure configured for converting the light intended to be emitted by the emission structure into at least one second wavelength λ2 different to the first wavelength λ1, arranged on the emission structure and including at least one second quantum well formed by a second InX2Ga1-X2N emissive layer, arranged between two second barriers each including several first InX3Ga1-X3N absorption layers separated from each other by at least one first GaN interlayer;
• in which the indium concentrations X1, X2 and X3 are such that 0<X1<X2 and Eg(InX2Ga1-X2N)<Eg(InX3Ga1-X3N)≤h·c/λ1,
• with:
• Eg corresponding to the gap, or to the forbidden energy gap;
• h corresponding to the Planck's constant equal to around 6.63·10−34 J·s;
• c corresponding to the speed of light, equal to around 299,792,458 m/s.