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US 2018/0323337 A1Published application
Al-ga-n template, method for preparing al-ga-n template, and semiconductor device comprising al-ga-n template
AssigneeHc Semitek (Suzhou) Co., Ltd.
InventorsBinzhong DONG, Wubin ZHANG, Haiping AI, Peng LI, Jiangbo WANG
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Abstract
An AlGaN template including a substrate and an Al1-xGaxN crystallization thin film deposited on the substrate, where 0<x<1. A method for preparing the AlGaN template includes providing a substrate; and depositing an Al1-xGaxN crystallization thin film on the substrate.
Claims10
An AlGaN template, comprising a substrate and an Al1-xGaxN crystallization thin film deposited on the substrate, where 0<x<1.
A method for preparing an AlGaN template, the method comprising:
- providing a substrate;
- and
- depositing an Al1-xGaxN crystallization thin film on the substrate, where 0<x<1.
Dependencies are inferred from the claim text.