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US 2018/0323319 A1Published application
Focused energy photovoltaic cell
AssigneeInternational Business Machines Corporation
InventorsTalia S. Gershon, Ning Li, Devendra K. Sadana, Ghavam G. Shahidi
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Abstract
A photovoltaic device that includes a p-n junction of first type III-V semiconductor material layers, and a window layer of a second type III-V semiconductor material on the light receiving end of the p-n junction, wherein the second type III-V semiconductor material has a greater band gap than the first type III-V semiconductor material, and the window layer of the photovoltaic device has a cross-sectional area of microscale.
Claims20
A photovoltaic device comprising:
- a p-n junction of first type III-V semiconductor material layers;
- and
- a window layer of a second type III-V semiconductor material on the light receiving end of the p-n junction, wherein the second type III-V semiconductor material has a greater band gap than the first type III-V semiconductor material, and the window layer of the photovoltaic device has a cross-sectional area of microscale.
A photovoltaic device comprising:
- a p-n junction of first type III-V semiconductor material layers;
- and
- a window bilayer of a second type III-V semiconductor material on a light receiving end of the p-n junction and a transparent dielectric layer present on the second type III-V semiconductor material layer, wherein the second type III-V semiconductor material layer has a greater band gap than the first type III-V semiconductor material, and the window bilayer of the photovoltaic device has a cross-sectional area of microscale.
A method of forming a photovoltaic device comprising:
- forming a p-n junction of type III-V semiconductor material layer having a microscale footprint on a supporting substrate;
- and
- forming a window layer on the light receiving end of the p-n junction, the window layer has a cross-sectional area of a microscale.
Dependencies are inferred from the claim text.