Semiconductor device and method of fabricating the same

A semiconductor device comprising:

• a plurality of nanowires each having source/drain regions and a channel region between the source/drain regions;
• a plurality of epitaxial layers respectively encircling the channel regions of the nanowires, wherein the epitaxial layers are spaced apart, and an outer profile of at least one of the epitaxial layers is different from an outer profile of at least one of the nanowires;
• and
• a gate electrode disposed around the epitaxial layers.

A semiconductor device, comprising:

• a plurality of nanowires each having source/drain regions and a channel region between the source/drain regions;
• a plurality of epitaxial layers, each of which encircles a respective one of the channel regions of the nanowires, wherein each of the epitaxial layers comprises a tip and facets meeting at the tip, and the tips of an adjacent pair of the epitaxial layers are in contact with each other;
• and
• a gate electrode disposed around the epitaxial layers.