Integrated ferroelectric capacitor/ field effect transistor structure

A method of forming a semiconductor structure, the method comprising:

• providing a functional gate structure located on a surface of a semiconductor material portion and laterally surrounded by a middle-of-the-line (MOL) dielectric material;
• recessing the functional gate structure to provide a capacitor cavity located above a remaining portion of the functional gate structure;
• and
• forming a ferroelectric capacitor in the capacitor cavity, the ferroelectric capacitor comprising a bottom electrode structure, a U-shaped ferroelectric material liner and a top electrode structure, wherein the bottom electrode structure is located entirely beneath the U-shaped ferroelectric material liner.