US 2018/0323307 A1 · IMAGING ELEMENT, ELECTRONIC APPLIANCE, METHOD FOR DRIVING IMAGING DEVICE, AND METHOD FOR DRIVING ELECTRONIC APPLIANCE

Abstract

An imaging element which is capable of obtaining a piece of image data by performing light exposure plural times is provided. In addition, an imaging element which is capable of obtaining image data with little noise is provided. Furthermore, an imaging device with reduced power consumption is provided. In an imaging element including a pixel, the pixel includes a photodiode, a transistor including an oxide semiconductor layer, a diode, and a charge retention portion. The polarity of an electrode of the photodiode which is connected to the transistor is the same as that of an electrode of the diode which is connected to the transistor.

Claims17

Dependent claims

1. An imaging device comprising:

a first shooting mode configured to electrically connect a photodiode and an amplifier through a first transistor, a switch and a first wiring;
and
a second shooting mode configured to electrically connect the photodiode and the amplifier through the first transistor, the switch and a second transistor,
wherein the switch is configured to switch the electrical connection through the first wiring and the electrical connection through the second transistor,
wherein the first transistor comprises an oxide semiconductor, and
wherein a gate of the second transistor is electrically connected to one of a source and a drain of the second transistor.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

16/038,529Filed 18 Jul 2018

Priority

JP 2014-11113329 May 2014

Published

8 Nov 2018

Term ends

Not estimatedThe source records don’t support an estimate.

Classification14 codes

H10D 30/6755
Characterised by the active materials: oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
H04N 25/671
Applied to fixed-pattern noise, e.g. non-uniformity of response: for non-uniformity detection or correction
H04N 25/77
Addressed sensors, e.g. MOS or CMOS sensors: pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H10D 30/67
Insulated-gate field-effect transistors [IGFET]: thin-film transistors [TFT]

Imaging element, electronic appliance, method for driving imaging device, and method for driving electronic appliance

Life of this patent

Imaging element, electronic appliance, method for driving imaging device, and method for driving electronic appliance

Life of this patent

Abstract

Claims17