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US 2018/0323303 A1Published application
Semiconductor device and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsLi-Jung LIU, Chun-Sheng LIANG, Shu-Hui WANG
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Abstract
A semiconductor device includes a semiconductor substrate, a filling conductor, an N-work function conductor layer and a gate dielectric layer. The filling conductor is over the semiconductor substrate. The N-work function conductor layer wraps around the filling conductor. The N-work function conductor layer comprises chlorine. The gate dielectric layer is between the N-work function conductor layer and the semiconductor.
Claims20
A semiconductor device, comprising:
- a semiconductor substrate;
- a filling conductor over the semiconductor substrate;
- an N-work function conductor layer wrapping around the filling conductor, wherein the N-work function conductor layer comprises chlorine;
- and
- a gate dielectric layer between the N-work function conductor layer and the semiconductor substrate.
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A semiconductor device, comprising:
- a semiconductor substrate;
- a gate dielectric layer over the semiconductor substrate;
- a titanium nitride layer over the gate dielectric layer;
- a chlorine-containing conductor layer over and conformal to the titanium nitride layer, the chlorine-containing conductor layer comprising an N-work function metal;
- and
- a filling conductor over the chlorine-containing conductor layer.
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A method, comprising:
- forming a dummy gate structure over a semiconductor substrate;
- etching the dummy gate structure to form a gate trench;
- forming a gate dielectric layer over a bottom surface and a sidewall of the gate trench;
- depositing a chlorine-containing N-work function conductor layer over the gate dielectric layer;
- and
- depositing a filling conductor over the chlorine-containing N-work function conductor layer.
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Dependencies are inferred from the claim text.