Method of making a cmos semiconductor device using a stressed silicon-on-insulator (soi) wafer

A device, comprising:

• a substrate;
• an insulating layer on the substrate;
• and
• a semiconductor layer on the insulating layer, the semiconductor layer having:
• a first stressed portion of a first semiconductor material;
• and
• a second stressed portion laterally adjacent to the first stressed portion, the second stressed portion including a first layer of the first semiconductor material on the insulating layer and a second layer of a second semiconductor material on the first layer;
• a first trench isolation region extending through the insulating layer and into the substrate, the first trench isolation region separating the first and second stressed portions;
• and
• a second trench isolation region extending through the insulating layer and into the substrate, the second stressed portion extending between the first trench isolation region and the second trench isolation region.

A device, comprising:

• a substrate;
• a first semiconductor layer on the substrate, the first semiconductor layer having a first portion and a second portion adjacent to the first portion, the second portion including a first semiconductor material and being thinner than the first portion;
• and
• a second semiconductor layer on the second portion of the first semiconductor layer, the second semiconductor layer including a second semiconductor material.

A device, comprising:

• a substrate having a first location and a second location adjacent to the first location;
• a first semiconductor layer on the substrate at the first location, the first semiconductor layer including a first semiconductor material;
• a second semiconductor layer on the substrate at the second location;
• a third semiconductor layer that is between the substrate and the second semiconductor layer at the second location;
• and
• a fourth semiconductor layer on the second semiconductor layer at the second location, the fourth semiconductor layer including a second semiconductor material.