Semiconductor apparatus

3:

• The semiconductor apparatus according to claim 1, comprising a plurality of the dummy trench gates, wherein one or some of the plurality of the dummy trench gate electrodes are electrically connected to an emitter electrode provided on the emitter layer and the other of the dummy trench gate electrodes is/are electrically connected to the cathode side of the diode.

4:

• The semiconductor apparatus according to claim 1, wherein
• the dummy trench gate electrode is formed of an n-type semiconductor and has a wiring portion that is connected to a second gate pad provided on the top surface side of the drift layer, and
• the diode is formed of a pn junction of a p-type semiconductor and the n-type semiconductor that are provided in a part of the wiring portion.

5:

• The semiconductor apparatus according to claim 1, wherein the diode includes a plurality of diodes connected in series.

6:

• The semiconductor apparatus according to claim 1, wherein the trench gate electrode is connected to the anode side of the diode via a resistor.

7:

• The semiconductor apparatus according to claim 6, wherein
• the trench gate electrode is formed of a semiconductor containing an impurity and has a wiring portion that is connected to a first gate pad provided on the top surface side of the drift layer, and
• the resistor is formed of a region that is provided in the wiring portion and has a lower impurity concentration than in the trench gate.

8:

• The semiconductor apparatus according to claim 2, comprising a plurality of the dummy trench gates, wherein one or some of the plurality of the dummy trench gate electrodes are electrically connected to an emitter electrode provided on the emitter layer and the other of the dummy trench gate electrodes is/are electrically connected to the cathode side of the diode.

9:

• The semiconductor apparatus according to claim 2, wherein
• the dummy trench gate electrode is formed of an n-type semiconductor and has a wiring portion that is connected to a second gate pad provided on the top surface side of the drift layer, and
• the diode is formed of a pn junction of a p-type semiconductor and the n-type semiconductor that are provided in a part of the wiring portion.

10:

• The semiconductor apparatus according to claim 2, wherein the diode includes a plurality of diodes connected in series.

11:

• The semiconductor apparatus according to claim 2, wherein the trench gate electrode is connected to the anode side of the diode via a resistor.

12:

• The semiconductor apparatus according to claim 11, wherein
• the trench gate electrode is formed of a semiconductor containing an impurity and has a wiring portion that is connected to a first gate pad provided on the top surface side of the drift layer, and
• the resistor is formed of a region that is provided in the wiring portion and has a lower impurity concentration than in the trench gate.