Method for manufacturing a bipolar junction transistor

A bipolar transistor, comprising:

• a collector of a first conductive type;
• a base layer of a second conductive type arranged above the collector;
• an emitter of the first conductive type arranged above the base layer,
• the collector being self-aligned to the emitter;
• an emitter isolation layer laterally surrounding the emitter;
• and
• a base link laterally connected to the base layer and extending lateral to the base layer,
• the base link being vertically connected to a portion of the base layer and extending above the base layer, and
• the base link being laterally connected to the emitter isolation layer.

A method comprising:

• providing a collector of a first conductive type;
• arranging a base layer of a second conductive type above the collector;
• providing an emitter of the first conductive type above the base layer,
• the collector being self-aligned with the emitter;
• surrounding the emitter with an emitter isolation layer;
• and
• laterally connecting a base link to the base layer,
• the base link extending lateral to the base layer,
• the base link being vertically connected to a portion of the base layer and extending above the base layer, and
• the base link being laterally connected to the emitter isolation layer.