Forming a uniform inner spacer for a vertical transport fin field effect transistor

A method of forming a vertical transport fin field effect transistor (VT FinFET), comprising:

• forming a plurality of vertical fins on a substrate;
• forming a sacrificial liner on at least two of the plurality of vertical fins, wherein the sacrificial liner is formed by a conformal deposition;
• forming sidewall spacers on the vertical surfaces of the sacrificial liner, wherein the sidewall spacers are on opposite sides of the at least two of the plurality of vertical fins;
• removing a portion of the sacrificial liner to form an L-shaped channel adjacent to each of the at least two of the plurality of vertical fins;
• and
• removing a portion of the inner spacer layer to form L-shaped inner spacers in the L-shaped channels.

A vertical transport fin field effect transistor (VT FinFET), comprising:

• a plurality of vertical fins on a substrate;
• an L-shaped inner spacer adjacent to each of the at least two of the plurality of vertical fins;
• an outer spacer on each of the L-shaped inner spacers;
• and
• a gate structure on the outer spacers and the L-shaped inner spacers.