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US 2018/0323279 A1Published application
Semiconductor device and method for fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorJae Hoon LEE
Life of this patent
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Abstract
A semiconductor may include a semiconductor substrate including a first region and a second region disposed at opposite sides of the first region, a first trench formed in the first region, a buffer layer filling a portion of the first trench, a first semiconductor layer formed on the buffer layer, a second semiconductor layer forming a hetero-junction with the first semiconductor layer on the first semiconductor layer of the first region and a gate electrode formed on the second semiconductor layer of the first region.
Claims9
A semiconductor device comprising:
- a semiconductor substrate comprising a first region and a second region disposed at opposite sides of the first region;
- a first trench formed in the semiconductor substrate in the first region;
- a buffer layer formed at a bottom of the first trench to fill a portion of the first trench;
- a first semiconductor layer formed on the buffer layer;
- a second semiconductor layer forming a hetero-junction with the first semiconductor layer on the first semiconductor layer of the first region;
- a source electrode and a drain electrode formed on the second region to be symmetric to each other with respect to the first region;
- a gate electrode formed on the second semiconductor layer of the first region;
- a gate contact layer formed between the second semiconductor layer and the gate electrode;
- and
- a passivation layer formed between the source electrode and the gate contact layer,
- wherein the passivation layer is directly in contact with the gate contact layer, and
- wherein the second semiconductor layer includes a material that has a greater energy band gap than that of the first semiconductor layer thereby forming a 2-dimensional electron gas layer (2DEG) within the first semiconductor layer under an interface between the first semiconductor layer and the second semiconductor layer.
9 more elements
A semiconductor device comprising:
- a source electrode and a drain electrode formed to be spaced apart from each other on a substrate;
- a first trench formed within the substrate between the source electrode and the drain electrode;
- and
- a gate structure filling the first trench, the gate structure comprising a buffer layer formed in a lower portion of the first trench, a first semiconductor layer being formed on the buffer layer and comprising a 2-dimensional electron gas layer region, a second semiconductor layer formed on the first semiconductor layer and a gate electrode formed on the second semiconductor layer,
- wherein the second semiconductor layer includes a material that has a greater energy band gap than that of the first semiconductor layer thereby forming the 2-dimensional electron gas layer (2DEG) within the first semiconductor layer under an interface between the first semiconductor layer and the second semiconductor layer,
- wherein the buffer layer does not overlap with the source electrode and the drain electrode in the vertical direction, and
- wherein the buffer layer comprises a first buffer layer and a second buffer layer being formed on the first buffer layer and comprising a stack of a plurality of layers having different Al content percentages.
4 more elements
Dependencies are inferred from the claim text.