Fin-fet devices and fabrication methods thereof

A method for fabricating a fin field-effect transistor (Fin-FET) device, comprising:

• forming a plurality of discrete fin structures on a substrate, wherein the substrate includes a first device region and a second device region;
• forming a plurality of dummy gate electrodes across the fin structures to cover a portion of top and sidewall surfaces of each fin structure;
• forming an interlayer dielectric layer on a portion of the fin structures exposed by the dummy gate electrodes, wherein the interlayer dielectric layer exposes the dummy gate electrodes;
• forming a first opening in the interlayer dielectric layer by removing each dummy gate electrode;
• forming an initial metal gate electrode to fill up the first opening and on the substrate between adjacent fin structures;
• and
• forming a second opening through the initial metal gate electrode and on the substrate, wherein;
• a portion of the initial metal gate electrode formed in the first device region is a first metal gate electrode, and a portion of the initial metal gate electrode formed in the second device region is a second metal gate electrode, and
• the second opening separates the first metal gate electrode in the first device region from the second metal gate electrode in the second device region.