Schottky contact structure for semiconductor devices and method for forming such schottky contact structure

A method for forming a Schottky contact semiconductor device, comprising:

• providing an evaporation chamber having therein:
• a first metal source, a second metal source;
• and a semiconductor having mask over a surface of the semiconductor, such mask having a window therein the expose a portion of a surface of the semiconductor;
• evaporating a portion of a first metal from the first metal source and depositing the evaporated first metal onto the mask and onto the exposed portion of the surface of the semiconductor forming a Schottky contact between the portion of the first metal and the exposed portion of the semiconductor to form a first metal layer;
• evaporating a portion of a second metal from the second metal source and depositing the evaporated second metal over the deposited first metal to form a second metal layer over the first metal layer;
• evaporating a portion of the first metal from the first metal source and depositing the evaporated first metal over the deposited second metal to form a third metal layer over the second metal layer;
• evaporating a portion of the second metal from the second metal source and depositing the evaporated second metal over the deposited first metal of the third metal layer to form a fourth metal layer over the second metal layer.