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US 2018/0323273 A1Published application
Device including a sidewall schottky interface
AssigneeSemiconductor Components Industries, LLC
InventorsYi SU, Ashok CHALLA, Tirthajyoti SARKAR, Min Kyung KO
Life of this patent
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Abstract
In one general aspect, a device can include a first trench disposed in a semiconductor region, a second trench disposed in the semiconductor region, and a recess disposed in the semiconductor region between the first trench and the second trench. The recess has a sidewall and a bottom surface. The device also includes a Schottky interface along a sidewall of the recess and the bottom surface of the recess excludes a Schottky interface.
Claims20
A device, comprising:
- a first trench disposed in a semiconductor region;
- a second trench disposed in the semiconductor region;
- a recess disposed in the semiconductor region between the first trench and the second trench, the recess having a sidewall and a bottom surface;
- and
- a Schottky interface formed by a first portion of the semiconductor region disposed along a sidewall of the recess, the first portion of the semiconductor region disposed along the sidewall having a dopant concentration less than a doping concentration of a second portion of the semiconductor region disposed between the first portion and the first trench in a direction perpendicular to the sidewall, the bottom surface of the recess excluding a Schottky interface.
2 more elements
A device, comprising:
- a first trench disposed in a semiconductor region having a first conductivity type;
- a second trench disposed in the semiconductor region;
- a recess disposed in the semiconductor region between the first trench and the second trench, the recess having a sidewall and a bottom surface, the semiconductor region having a width W perpendicular to the sidewall between the first trench and the sidewall;
- a first region of the semiconductor region along the sidewall, the first region having a width W1 perpendicular to the sidewall with W1<W and having dopant concentration less than a dopant concentration of the semiconductor region adjacent to the first region;
- a second region along the bottom surface having a second conductivity type;
- and
- a metal in contact with the first region and the second region.
4 more elements
A method, comprising:
- forming a first trench and a second trench in a semiconductor region having a first conductivity type;
- forming a recess disposed in the semiconductor region between the first trench and the second trench, the recess having a sidewall and a bottom surface;
- and
- performing an implant of a dopant of a second conductivity type in the recess until a first region along the sidewall of the recess and a second region along the bottom surface of the recess have a different conductivity type.
1 more element
Dependencies are inferred from the claim text.