Vertical fin with a gate structure having a modified gate geometry

A method of forming a gate structure with a modified gate geometry, comprising:

• forming two gate spacers and a dummy gate fill on a substrate, wherein each of the two gate spacers has a thickness in the range of about 3 nm to about 15 nm, and wherein the dummy gate fill has an initial width, W1, in a range of about 15 nm to about 50 nm between the two gate spacers;
• and
• forming a stressed layer on the surfaces of the gate spacers opposite the dummy gate fill.

A method of forming a gate structure with a modified gate geometry, comprising:

• forming two gate spacers and a dummy gate fill on a channel, wherein the dummy gate fill is between the two gate spacers;
• and
• forming a stressed layer on the two gate spacers, wherein the stressed layer is on the surfaces of the gate spacers opposite the dummy gate fill, and wherein the stressed layer applies a tensile stress to the two gate spacers.