Gate structure and method of fabricating the same

A gate structure, comprising:

• a first work function metal layer disposed over a gate dielectric layer and lining a portion of a sidewall of a spacer;
• a second work function metal layer disposed over the first work function metal layer;
• a third work function metal layer disposed over the second work function metal layer;
• and
• a filling metal in contact with the first work function metal layer and the third work function metal layer, wherein the second work function metal layer is spaced apart from the filling metal by the third work function metal layer.

A method of forming a gate structure, the method comprising:

• forming a first work function metal layer on a sidewall of a material that defines a recess;
• forming a second work function metal layer over the first work function metal layer;
• removing a first portion of the second work function metal layer to expose a first portion of a sidewall of the first work function metal layer, wherein a second portion of the second work function metal layer remains on a second portion of the sidewall of the first work function metal layer after the removing;
• filling the recess with a filling metal;
• removing a portion of the filling metal to expose the first work function metal layer and form a second recess;
• and
• depositing a protection layer in the second recess to contact the first work function metal layer, wherein the protection layer is spaced apart from the second portion of the second work function metal layer by the filling metal.