Fabrication of wrap-around and conducting metal oxide contacts for igzo non-planar devices

A method of forming a non-planar InGaZnO (IGZO) transistor, comprising:

• forming a first layer over a substrate, wherein the first layer includes IGZO;
• patterning the first layer to form a fin;
• forming a dummy gate electrode over the fin;
• forming a source contact and a drain contact on opposite sides of the dummy gate electrode, wherein the source and drain contact are adjacent to more than one surface of the fin;
• removing the dummy gate electrode;
• forming a gate dielectric layer on exposed portions of the IGZO;
• and
• forming a gate electrode over the gate dielectric layer.

A semiconductor device, comprising:

• a substrate;
• a source contact formed over the substrate;
• a drain contact formed over the substrate;
• a gate electrode formed between the source contact and the drain contact, wherein the gate electrode is separated from drain contact and the source contact by at least a spacer layer;
• and
• an InGaZnO (IGZO) nanowire formed through the gate electrode and contacting the source contact and the drain contact.