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US 2018/0323262 A1Published application
Silicon carbide single crystal substrate, silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor device
AssigneeSumitomo Electric Industries, Ltd.
InventorTsutomu Hori
Life of this patent
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Abstract
A silicon carbide single crystal substrate includes a first main surface and an orientation flat. The orientation flat extends in a <11-20> direction. The first main surface includes an end region extending by at most 5 mm from an outer periphery of the first main surface. In a direction perpendicular to the first main surface, an amount of warpage of the end region continuous to the orientation flat is not greater than 3 μm.
Claims13
A silicon carbide single crystal substrate comprising:
- a first main surface;
- and
- an orientation flat extending in a <11-20> direction,
- the first main surface including an end region extending by at most 5 mm from an outer periphery of the first main surface, and
- in a direction perpendicular to the first main surface, an amount of warpage of the end region continuous to the orientation flat being not greater than 3 μm.
2 more elements
Dependencies are inferred from the claim text.