Silicon carbide semiconductor device and method for producing same

A method for producing a silicon carbide semiconductor device which is provided with an ohmic electrode ohmically connected to a front surface or a rear surface of a semiconductor substrate that has the front surface and the rear surface, and is made of silicon carbide, the method comprising:

• forming a first metallic material film and a second metallic material film on the front surface or the rear surface of the semiconductor substrate using first metallic material including a metal element for producing a metal silicide part and second metallic material including a metal element for producing a metal carbide part;
• and
• forming the metal carbide part having a block shape using the metal element included in the second metallic material and a carbon in silicon carbide, and forming the metal silicide part surrounding a periphery of the metal carbide part and disposed between the semiconductor substrate and the metal carbide part using the metal element included in the first metallic material and a silicon in silicon carbide, by irradiating the first metallic material and the second metallic material with a laser beam having an energy density equal to or more than 1.4 J/cm2.