Semiconductor device and method of fabricating the same

A semiconductor device comprising:

• a plurality of nanowires, wherein first portions of the nanowires are positioned in an overlying relationship and are doped to form source and drain regions;
• an epitaxial layer having at least a portion interposed in between the first portions of the nanowires;
• and
• a gate disposed over second portions of the nanowires.

A semiconductor device comprising:

• a multi-layer stack comprising a nanowire;
• an epitaxial layer wrapping around a first portion of the nanowire in a diamond shape, wherein the nanowire and the epitaxial layer form an interface extending along a lengthwise direction of the nanowire;
• and
• a gate disposed over a second portion of the nanowire.