Fin-type field effect transistor and method of forming the same

A method of forming a FinFET, comprising:

• providing a substrate, wherein the substrate has an insulating layer formed thereon, the insulating layer has at least one trench formed therein, and the at least one trench extends to a portion of the substrate;
• sequentially forming a seed layer, a stress relaxation layer and a channel layer in the at least one trench;
• removing a portion of the insulating layer, so as to expose a portion of the channel layer;
• and
• forming at least one gate across the channel layer.