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US 2018/0323254 A1Published application
Semiconductor die with back-side integrated inductive component
AssigneeTexas Instruments Incorporated
InventorsBenjamin Stassen Cook, Roberto Giampiero Massolini, Daniel Carothers
Life of this patent
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Abstract
An integrated circuit (IC) includes a circuit substrate having a front side surface and an opposite back side surface. Active circuitry is located on the front side surface. An inductive structure is located within a deep trench formed in the circuit substrate below the backside surface. The inductive structure is coupled to the active circuitry.
Claims17
An integrated circuit (IC) comprising:
- a circuit substrate having a front side and an opposite back side;
- active circuitry on the front side;
- and
- an inductive structure embedded within a deep trench in the circuit substrate on the back side, the inductive structure being connected to the active circuitry by through silicon vias in the circuit substrate.
1 more element
A system comprising:
- a system substrate;
- an integrated circuit (IC) mounted on the system substrate, wherein the IC includes:
- a circuit substrate having a front side surface and an opposite back side surface;
- active circuitry on the front side surface;
- and an inductive structure within a deep trench in the circuit substrate below the backside surface;
- and
- a package substrate, the inductive structure being coupled to the active circuitry via the package substrate.
4 more elements
A method of making an integrated circuit having an integrated inductive component, the method comprising:
- fabricating active circuitry on a front side of a circuit substrate of the integrated circuit;
- etching a deep trench into a back side of the circuit substrate;
- filling the deep trench with an electrically conductive material to form a coil;
- and
- coupling the coil to the active circuitry by through silicon vias in the circuit substrate.
2 more elements
Dependencies are inferred from the claim text.