Organic light-emitting diode display panel and manufacturing method thereof
AssigneeShenzhen China Star Optoelectronics Technology Co., Ltd.
InventorsXiaoxing ZHANG, Yuan-Jun HSU
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Abstract
The present invention provides an organic light-emitting display panel and manufacturing method thereof. The method is to use the feature that silicon nitride has more hydrogen atoms, so that the oxide semiconductor in contact with the part of oxide semiconductor pattern layer with conductor characteristics, can be continuously doped with hydrogen atoms to hold conductor characteristics, and the contact impedance between the part of oxide semiconductor pattern layer and the source and the drain can be continuously maintained at a low state to achieve the function of TFT.
Claims15
A method of manufacturing an organic light-emitting diode display panel, wherein the method comprises:
- depositing a buffer layer on a substrate and arranging an oxide semiconductor pattern layer, a gate insulating layer, and a gate pattern layer stacked sequentially on the buffer layer;
- arranging a dielectric layer for covering the oxide semiconductor pattern layer, the gate insulating layer, and the gate pattern layer on the buffer layer, and the dielectric layer comprising a silicon nitride layer in contact with the oxide semiconductor pattern layer;
- annealing the dielectric layer, and the silicon nitride layer casing a part of oxide semiconductor pattern layer to have conductor characteristics during the annealing process;
- arranging a source and a drain in contact with the part of oxide semiconductor pattern layer, with conductor characteristics;
- wherein the buffer layer comprises a silicon oxide layer in contact with the oxide semiconductor pattern layer;
- wherein the gate insulating layer comprises a third part and a fourth part, the fourth part is adjacent to the third part, the third part is arranged opposite to the gate pattern layer, the fourth part is in contact with the nitrogen silicon layer.
A method of manufacturing an organic light-emitting diode display panel, wherein the method comprises:
- depositing a buffer layer on a substrate and arranging an oxide semiconductor pattern layer, a gate insulating layer, and a gate pattern layer stacked sequentially on the buffer layer;
- arranging a dielectric layer for covering the oxide semiconductor pattern layer, the gate insulating layer, and the gate pattern layer on the buffer layer, and the dielectric layer comprising a silicon nitride layer in contact with the oxide semiconductor pattern layer;
- annealing the dielectric layer, and the silicon nitride layer casing a part of oxide semiconductor pattern layer to have conductor characteristics during the annealing process;
- arranging a source and a drain in contact with the part of oxide semiconductor pattern layer, with conductor characteristics.
An organic light-emitting diode display panel, wherein the display panel comprises:
- depositing a buffer layer on a substrate and arranging an oxide semiconductor pattern layer, a gate insulating layer, and a gate pattern layer stacked sequentially on the buffer layer, wherein a part of oxide semiconductor pattern layer has conductor characteristics;
- a dielectric layer covering the oxide semiconductor pattern layer, the gate insulating layer, and the gate pattern layer, and the dielectric layer comprising a silicon nitride layer in contact with the oxide semiconductor pattern layer;
- a source and a drain in contact with the part of oxide semiconductor pattern layer, with conductor characteristics.
Dependencies are inferred from the claim text.