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US 2018/0323238 A1Published application
Resistive memory cell structures and methods
AssigneeMicron Technology, Inc.
InventorsFabio Pellizzer, Ferdinando Bedeschi
Life of this patent
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Abstract
Resistive memory cell structures and methods are described herein. One or more memory cell structures comprise a first resistive memory cell comprising a first resistance variable material and a second resistive memory cell comprising a second resistance variable material that is different than the first resistance variable material.
Claims21
-20. (canceled)
A method of forming an array of resistive memory cells, the method comprising:
- forming a first number of resistive memory cells in a first region of the array and a second number of resistive memory cells in a second region of the array;
- and
- modifying an electrothermal property of a resistance variable material in at least one of the first region of the array and the second region of the array.
A method of forming an array of resistive memory cells, the method comprising:
- forming a first conductive material in a first region and a second region of the array;
- forming a resistance variable material on the first conductive material;
- forming a second conductive material on the resistance variable material;
- removing a portion of the second conductive material from the second region of the array;
- forming a third conductive material on the second conductive material in the first region and on the resistance variable material in the second region of the array;
- forming a fourth conductive material on the third conductive material;
- and
- defining individual resistive memory cells by removing portions of the first and second resistance variable materials and portions of the first, second, third, and fourth conductive materials.
5 more elements
A method of forming an array of resistive memory cells, the method comprising:
- forming a first resistance variable material on a first conductive material formed in a first and a second region of the array;
- forming a first cap material on the first resistance variable material;
- removing the first resistance variable material and the first cap material from the second region;
- forming the second resistance variable material on the first cap material of the first region and on the conductive material of the second region;
- forming a second cap material on the second resistance variable material;
- removing the second resistance variable material and the second cap material from the first region;
- and
- forming separate cell stacks corresponding to the respective first and second number of resistive memory cells.
5 more elements
Dependencies are inferred from the claim text.