Phase-change memory
AssigneeSTMicroelectronics (Crolles 2) SAS
InventorsPierre MORIN, Philippe BRUN, Laurent-Luc CHAPELON
Life of this patent
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Abstract
A phase-change memory includes a strip of phase-change material that is coated with a conductive strip and surrounded by an insulator. The strip of phase-change material has a lower face in contact with tips of a resistive element. A connection network composed of several levels of metallization coupled with one another by conducting vias is provided above the conductive strip. At least one element of a lower level of the metallization is in direct contact with the upper surface of the conductive strip.
Claims18
A phase-change memory, comprising:
- a strip of phase-change material coated with a conductive strip and surrounded by an insulator, the strip of phase-change material being in contact via a lower face with tips of resistive elements;
- and
- a connection network composed of several levels of metallization coupled with one another by conducting vias, at least one element of the lower metallization level being in direct contact with an upper face of the conductive strip.
A phase-change memory, comprising:
- a strip of phase-change material;
- a metal conductive strip on a top surface of the strip of phase-change material;
- a first insulating layer laterally surrounding the metal conductive strip and the strip of phase-change material;
- an etch stop layer above the metal conductive strip and the first insulating layer;
- wherein the etch stop layer includes an opening extending through the etch stop layer to a top surface of the metal conductive strip;
- and
- a metal connection structure filling said opening.
A method of fabricating a phase-change memory, comprising:
- uncovering an upper face of a conductive strip that covers a strip of phase-change material, the strip of phase-change material being surrounded by at least a first insulator and in contact via a lower face with tips of resistive elements;
- depositing an etch-stop layer on the conductive strip and first insulator;
- and
- forming at least one element of a lower metallization level of a connection network within the etch-stop layer, in direct contact with a top surface of the conductive strip.
A phase-change memory, comprising:
- a strip of phase-change material coated with a conductive strip and surrounded by an insulator, the strip of phase-change material being in contact via a lower face with tips of resistive elements;
- an etch stop layer covering the conductive strip and the insulator, the etch stop layer in an insulating material whose etching is selectively with respect to the insulator;
- and
- a connection network composed of several levels of metallization coupled with one another by conducting vias, at least one element of the lower metallization level being in direct contact with an upper face of the conductive strip through an opening in the etch stop layer.
Dependencies are inferred from the claim text.