Back to results
US 2018/0323233 A1Published application
Method of manufacturing a semiconductor device
AssigneeSii Semiconductor Corporation
InventorToshiro FUTATSUGI
Life of this patent
Estimating the term…
Abstract
In order to form a light receiving element having high reliability and a MOS transistor together on the same silicon substrate, after forming a gate electrode of the MOS transistor, a gate oxide film in a light receiving element forming region is removed. Then, a thermal oxide film is newly formed in the light receiving element forming region, and ion implantation is performed in the light receiving element forming region through the thermal oxide film such that a shallow pn junction is formed.
Claims7
A method of manufacturing a semiconductor device, comprising:
- forming a first thermal oxide film serving as a gate oxide film of a MOS transistor on a surface of a silicon substrate having a light receiving element forming region and a MOS transistor forming region;
- forming a polysilicon film on the first thermal oxide film;
- patterning the polysilicon film, to thereby form a gate electrode of the MOS transistor in the MOS transistor forming region;
- removing the first thermal oxide film other than the first thermal oxide film under the gate electrode;
- forming a second thermal oxide film on the surface of the silicon substrate;
- and
- performing ion implantation of an impurity on the light receiving element forming region through the second thermal oxide film, to thereby form an impurity region.
4 more elements
Dependencies are inferred from the claim text.