US 2018/0323232 A1 · SOLID-STATE IMAGING DEVICE

Abstract

A solid-state imaging device includes a plurality of pixels two-dimensionally arranged on a semiconductor substrate. Each of the pixels includes at least one shallow light receiving portion formed near a surface of the semiconductor substrate and at least one deep light receiving portion formed under the shallow light receiving portion. One or more of the shallow light receiving portions and the deep light receiving portion are connected to each other so as to form a second light receiving portion. The rest of the shallow light receiving portions forms a first light receiving portion. Excess electric charge in the first light receiving portion is discharged to the deep light receiving portion.

Claims8

Dependent claims

A solid-state imaging device, comprising:

a plurality of pixels two-dimensionally arranged on a semiconductor substrate, wherein
each of the plurality of pixels includes at least one shallow light receiving portion formed near a surface of the semiconductor substrate and at least one deep light receiving portion formed under the shallow light receiving portion,
one or more of the shallow light receiving portions and the deep light receiving portion are connected to each other so as to form a second light receiving portion, and the rest of the shallow light receiving portions forms a first light receiving portion, and
excess electric charge in the first light receiving portion is discharged to the deep light receiving portion.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

16/033,478Filed 12 Jul 2018

Priority

JP 2016-00597715 Jan 2016

Published

8 Nov 2018

Term ends

Not estimatedThe source records don’t support an estimate.

Classification11 codes

H10F 30/20
Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors: the…
H04N 25/62
Noise processing, e.g. detecting, correcting, reducing or removing noise: detection or reduction of noise due to excess charges produced by the…
H04N 25/70
Circuitry of solid-state image sensors [SSIS]; Control thereof: sSIS architectures; Circuits associated therewith
H04N 25/76
SSIS architectures; Circuits associated therewith: addressed sensors, e.g. MOS or CMOS sensors

Solid-state imaging device

Life of this patent

Solid-state imaging device

Life of this patent

Abstract

Claims8