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US 2018/0323220 A1Published application
Metal oxide film and method for forming metal oxide film
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsMasahiro TAKAHASHI, Takuya HIROHASHI, Masashi TSUBUKU, Noritaka ISHIHARA, Masashi OOTA
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Abstract
A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ.
Claims19
(canceled)
A transistor comprising:
- a channel formation region comprising an oxide semiconductor,
- wherein a plurality of circumferentially distributed spots are observable in a nanobeam electron diffraction pattern of the oxide semiconductor.
A transistor comprising:
- a channel formation region comprising an oxide semiconductor,
- wherein the oxide semiconductor comprises the channel formation region and a first region in contact with a source electrode and a second region in contact with a drain electrode, and
- wherein a plurality of circumferentially distributed spots are observable in a nanobeam electron diffraction pattern of each of the channel formation region, the first region and the second region.
A transistor comprising:
- a channel formation region,
- wherein the channel formation region comprises an oxide semiconductor comprising a crystalline part,
- wherein a crystalline peak is not observable in an XRD spectrum with respect to the oxide semiconductor.
A transistor comprising:
- a channel formation region comprising an oxide semiconductor,
- wherein the oxide semiconductor comprising a crystalline part,
- wherein the oxide semiconductor comprises the channel formation region and a first region in contact with a source electrode and a second region in contact with a drain electrode,
- wherein a crystalline peak is not observable in an XRD spectrum with respect to each of the channel formation region, the first region and the second region.
1 more element
Dependencies are inferred from the claim text.