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US 2018/0323207 A1Published application
Semiconductor device and method of manufacturing the same
AssigneeSK hynix Inc.
InventorsSung Bo SHIM, Jung Dal CHOI
Life of this patent
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Abstract
Provided herein may be a semiconductor device. The semiconductor device may include a first substrate, a second substrate disposed on the first substrate, a stack which is disposed on the second substrate and includes stacked memory cells, and a discharge contact structure electrically coupling the second substrate with the first substrate such that charges in the second substrate are discharged to the first substrate.
Claims18
A semiconductor device comprising:
- a first substrate;
- a second substrate disposed over the first, substrate;
- a stack with stacked memory cells disposed on the second substrate;
- and
- a discharge contact structure electrically coupling the second substrate with the first substrate, wherein charges in the second substrate are discharged to the first substrate.
2 more elements
The semiconductor device according to claim:
- further comprising:
- a peripheral circuit formed on the first substrate.
Dependencies are inferred from the claim text.