Semiconductor device and manufacturing method for the same
AssigneeSK hynix Inc.
InventorsMyeong Seong YOON, Il Seok SEO
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes interlayer insulating layers and conductive patterns alternately stacked over a pipe gate, a first slit and a second slit penetrating the interlayer insulating layers and the conductive patterns and crossing each other, an etch stop pad groove overlapping an intersection of the first slit and the second slit, arranged in the pipe gate, and connected to the first slit or the second slit, and slit insulating layers filling the first slit, the second slit and the etch stop pad groove.
Claims20
1-10. (canceled)
A manufacturing method of a semiconductor device, the manufacturing method comprising:
- forming a pipe gate in which an etch stop pad groove filled with an etch stop pattern is formed;
- alternately stacking first material layers and second material layers over the pipe gate;
- forming a first slit penetrating the first material layers and the second material layers and overlapping the etch stop pattern;
- opening the etch stop pad groove by removing the etch stop pattern through the first slit;
- forming a first slit insulating layer filling the first slit and the etch stop pad groove;
- and
- forming a second slit penetrating the first material layers and the second material layers, the second slit crossing the first slit at an overlapping portion of the first slit and the etch stop pad groove.
A manufacturing method of a semiconductor device, the manufacturing method comprising:
- forming a pipe gate in which an etch stop pad groove filled with an etch stop pattern is formed;
- alternately stacking first material layers and second material layers over the pipe gate;
- forming a first slit penetrating the first material layers and the second material layers and overlapping the etch stop pattern;
- forming a first slit insulating layer in the first slit;
- forming a second slit penetrating the first material layers and the second material layers, the second slit intersecting the first slit at an overlapping portion of the first slit and the etch stop pad groove;
- removing the etch stop pattern through the second slit;
- and
- forming a second slit insulating layer filling the second silt and the etch stop pad groove.
A manufacturing method of a semiconductor device, the manufacturing method comprising:
- forming a pipe gate in which an etch stop pad groove filled with an etch stop pattern is formed;
- alternately stacking first material layers and second material layers over the pipe gate;
- forming a first slit and a second slit penetrating the first material layers and the second material layers, wherein the first slit and the second slit cross each other to define an overlapping area on the etch stop pad groove;
- opening the etch stop pad groove by removing the etch stop pattern through the first slit or the second slit;
- and
- forming an insulating layer filling the etch stop pad groove and the overlapping area, the insulating layer completely filling the etch stop pad groove.
Dependencies are inferred from the claim text.