Semiconductor device and method for fabricating the same
AssigneesUnited Microelectronics Corp., Fujian Jinhua Integrated Circuit Co., Ltd.
InventorsLi-Wei Feng, Chien-Ting Ho, Shih-Fang Tzou
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Abstract
A method for fabricating semiconductor device includes the steps of first forming a first trench and a second trench in a substrate and then forming a shallow trench isolation (STI) in the first trench, in which the STI comprises a top portion and a bottom portion and a top surface of the top portion is even with or higher than a bottom surface of the second trench. Next, a conductive layer is formed in the first trench and the second trench to form a first gate structure and a second gate structure.
Claims21
A method for fabricating semiconductor device, comprising:
- forming a first trench and a second trench in a substrate;
- forming a shallow trench isolation (STI) in the first trench, wherein the STI comprises a top portion and a bottom portion and a top surface of the top portion is even with or higher than a bottom surface of the second trench;
- and
- forming a conductive layer in the first trench and the second trench to form a first gate structure and a second gate structure.
A semiconductor device, comprising:
- a first gate structure in a substrate;
- a second gate structure in the substrate and adjacent to the first gate structure;
- and
- a shallow trench isolation (STI) under the first gate structure, wherein the STI comprises a bottom portion and a top portion directly under the first gate structure, two sidewalls of the top portion are aligned with two sidewalls of the first gate structure, and a topmost surface of the top portion is even with or higher than a bottom surface of the second gate structure and lower than a top surface of the substrate.
A semiconductor device, comprising:
- a shallow trench isolation (STI) in a substrate, wherein the STI comprises:
- a bottom portion;
- and
- a top portion on the bottom portion, wherein a top surface of the top portion is even with or higher than a top surface of the substrate and a topmost surface of the bottom portion is lower than the top surface of the substrate.
Dependencies are inferred from the claim text.