Indirect readout fet

A metal-insulator-metal (MIM) capacitor structure comprising:

• source and drain regions formed within a semiconductor substrate;
• a first conducting layer formed over the source and drain regions;
• a dielectric layer formed over the first conducting layer;
• a second conducting layer formed over the dielectric layer;
• a sidewall dielectric formed adjacent the first conducting layer and the dielectric layer;
• wherein an electric field is created indirectly through the sidewall dielectric to an adjacent field effect transistor (FET) channel in the semiconductor substrate.

A metal-insulator-metal (MIM) capacitor structure comprising:

• source and drain regions formed within a semiconductor substrate;
• a first conducting layer formed over the source and drain regions;
• a doped region defined between the source and drain regions;
• a dielectric layer formed over the first conducting layer;
• a second conducting layer formed over the dielectric layer;
• and
• a slot defined in the second conducting layer, the slot being aligned with the doped region;
• wherein the slot allows modulation of a field effect transistor (FET) channel formed in the semiconductor substrate.