3DIC Formation with Dies Bonded to Formed RDLs

A semiconductor device comprising:

• a first dielectric layer;
• a plurality of redistribution lines over the first dielectric layer;
• a second dielectric layer over the plurality of redistribution lines;
• a plurality of bond pads in the second dielectric layer, top surfaces of the plurality of bond pads being coplanar with a top surface of the second dielectric layer;
• a device die bonded to the second dielectric layer and the plurality of bond pads, the device die having a device dielectric layer bonded to the second dielectric layer through dielectric-to-dielectric bonds, the device die further having device bond pads bonded to the plurality of bond pads through direct metal bonds;
• and
• an encapsulant encapsulating the device die.

A package comprising:

• a first redistribution structure, the first redistribution structure comprising:
• a first plurality of redistribution lines, the first plurality of redistribution lines being located in a first plurality of dielectric layers;
• and
• a first plurality of bond pads, the first plurality of bond pads being coupled to the first plurality of redistribution lines, the first plurality of dielectric layers comprising a first surface dielectric layer, a first surface of the first surface dielectric layer being coplanar with first surfaces of the first plurality of bond pads;
• a first device die comprising:
• a second plurality of bond pads bonded to the first plurality of bond pads through metal-to-metal bonding;
• a second plurality of dielectric layers comprising a second surface dielectric layer, the second surface dielectric layer having a second surface coplanar with second surfaces of the second plurality bond pads, wherein the first surface dielectric layer is bonded to the second surface dielectric layer through dielectric-to-dielectric bonding;
• and
• a second redistribution structure contacting a surface of the first device die opposite the second surface of the second surface dielectric layer, the second redistribution structure comprising:
• a second plurality of redistribution lines, the second plurality of redistribution lines being located in a third plurality of dielectric layers;
• and
• a third plurality of bond pads, the third plurality of bond pads being coupled to the second plurality of redistribution lines, the third plurality of dielectric layers comprising a third surface dielectric layer, a third surface of the third surface dielectric layer being coplanar with third surfaces of the third plurality of bond pads;
• and
• a second device die comprising:
• a fourth plurality of bond pads bonded to the third plurality of bond pads through metal-to-metal bonding;
• and
• a fourth plurality of dielectric layers comprising a fourth surface dielectric layer, the fourth surface dielectric layer having a fourth surface coplanar with fourth surfaces of the fourth plurality bond pads, wherein the third surface dielectric layer is bonded to the fourth surface dielectric layer through dielectric-to-dielectric bonding.