Fabrication and use of through silicon vias on double sided interconnect device

A system comprising:

• a package substrate comprising a supply connection;
• and
• a die coupled to the package substrate, the die comprising:
• (i) a device stratum comprising a plurality of transistor devices each comprising a first side and an opposite second side;
• (ii) one or more electrically conductive interconnect levels on a first side of the device stratum and coupled to ones of the transistor devices;
• and
• (iii) a substrate comprising a an electrically conductive through silicon via coupled to the one or more electrically conductive interconnect level on a first side of the structure so that the one or more interconnect levels are between the through silicon via and the device stratum.

A method comprising:

• forming a plurality of transistor devices on a substrate, the plurality of transistor devices defining a device stratum comprising a first side and an opposite second side, wherein the second side is coupled to the substrate;
• forming one or more interconnect levels on a first side of the device stratum, the one or more interconnect levels coupled to ones of the plurality of devices;
• removing a portion of the substrate;
• and
• coupling a through silicon via to the one or more interconnect levels such that the one or more interconnect levels is disposed between the device stratum and the through silicon via.