Trench mosfet device and the preparation method thereof

A method for fabricating a trench metal-oxide-semiconductor field-effect transistor (MOSFET) device, the method comprising the steps of:

• providing a semiconductor substrate of a first conductivity type;
• forming a plurality of first trenches arranged side by side in a first stripe layout extending along a first direction in a first preset area of the semiconductor substrate;
• forming a plurality of second trenches arranged side by side in a second stripe layout extending along a second direction perpendicular to the first direction in a second preset area of the semiconductor substrate;
• filling the plurality of first trenches and the plurality of second trenches with a conductive material so as to form a plurality of control gates;
• implanting dopant of a second conductivity type on a top portion of the semiconductor substrate to form a body region;
• and
• implanting dopant of the first conductivity type on a top portion of the body region to form a source region.