Semiconductor device and method of forming backside openings for an ultra-thin semiconductor die

Abstract

A semiconductor substrate contains a plurality of openings extending partially into a surface of the semiconductor substrate. A conductive layer is formed with a first portion of the conductive layer over a remaining portion of the surface of the semiconductor substrate between the openings and a second portion of the conductive layer in the openings. The remaining portion of the surface of the semiconductor substrate is removed to lift-off the first portion of the conductive layer while leaving the second portion of the conductive layer in the openings. The semiconductor substrate is singulated to separate the semiconductor die leaving the second portion of the conductive layer over a surface of the semiconductor die. Alternatively, a plurality of openings is formed over each semiconductor die. A conductive layer is formed over a remaining portion of the surface of the semiconductor substrate between the openings and into the openings.

Dependencies are inferred from the claim text.