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US 2018/0323152 A1Published application
Semiconductor structure and fabricating method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuo-Hung LEE, Chih-Fei LEE, Fu-Cheng CHANG, Ching-Hung KAO
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Abstract
A method of fabricating a semiconductor structure includes forming an alignment mark layer on a substrate; patterning the alignment mark layer for forming at least one alignment mark feature; forming a bottom conductive layer on the patterned alignment mark layer in a substantially conformal manner; forming an insulator layer on the bottom conductive layer; and forming a top conductive layer on the insulator layer.
Claims20
A semiconductor structure comprising:
- a substrate comprising:
- a first product region;
- and
- an alignment region disposed adjacent the first product region;
- an alignment mark feature disposed over the alignment region;
- a bottom conductive layer disposed over the alignment mark feature in a substantially conformal manner;
- an insulator layer disposed over the bottom conductive layer;
- and
- a top conductive layer disposed over the insulator layer.
6 more elements
A semiconductor structure comprising:
- a conductive feature;
- a dielectric layer disposed over the conductive feature;
- an alignment mark feature disposed over the dielectric layer;
- and
- a bottom conductive layer in contact with a top surface and a sidewall of the alignment mark feature.
2 more elements
A semiconductor structure comprising:
- a substrate comprising:
- a product region;
- and
- an alignment region disposed adjacent the product region;
- an alignment mark layer disposed over the alignment region and comprising a first portion having a first height and a second portion having a second height different than the first height;
- and
- a bottom conductive layer disposed over the first portion of the alignment mark layer and the second portion of the alignment mark layer.
4 more elements
Dependencies are inferred from the claim text.