Semiconductor device and io-cell

An IO-cell comprising at least a buffer circuit formed therein, the IO-cell further comprising:

• a first wiring layer in which a plurality of first power supply lines for supplying first electric power to the buffer circuit and a plurality of second power supply lines for supplying second electric power to the buffer circuit are alternately arranged in a first direction;
• and
• a second wiring layer in which a third power supply line connected to adjacent first power supply lines among the plurality of first power supply lines through a via is disposed, the third power supply line being supplied with the first electric power, wherein
• all of the first, second and third power supply lines are formed so as to extend in a second direction perpendicular to the first direction.

A semiconductor device comprising:

• a first wiring layer in which a plurality of first power supply lines connected to first electric power and a plurality of second power supply lines connected to second electric power are arranged side-by-side in a first direction with first power supply lines being alternated with second power supply lines in said first direction;
• and
• a second wiring layer in which a third power supply line is disposed, the third power supply line being electrically connected through vias to spaced apart first and second ones of said plurality of first power supply lines, wherein:
• the first electric power is different from the second electric power;
• in the first wiring layer, a single second power supply line, and no other intervening conductive line, is disposed between said spaced apart first and second ones of said plurality of first power supply lines to which the third power supply line is electrically connected through vias, and
• each of the first, second and third power supply lines is formed such that a longest dimension is in a second direction perpendicular to the first direction.