Dam for Three-Dimensional Integrated Circuit

A method comprising:

• bonding an integrated circuit (IC) chip to a first side of a first substrate by a plurality of first conductive members;
• disposing a dam structure adjacent the IC chip on the first side of the first substrate;
• bonding a second side of the first substrate to a second substrate by a plurality of second conductive members;
• forming a first underfill material between the IC chip and the first side of the first substrate;
• forming a second underfill between the first substrate and the second substrate, the second underfill contacting a sidewall of the dam structure;
• and
• attaching a lid to the second substrate, the IC chip, and the dam structure, the lid being attached to a top surface of the IC chip and the dam structure by a first thermal interface material (TIM).

A method comprising:

• bonding an integrated circuit chip to a first side of a first substrate;
• forming a dam structure on the first side of the first substrate proximate a perimeter of the first substrate, the dam structure being a nearest dam structure to an outermost edge of the first substrate;
• bonding a second side of the first substrate to a second substrate;
• disposing a first underfill material in a first gap between the first substrate and the second substrate;
• disposing a second underfill material in a second gap between the IC chip and the first substrate, the second underfill material being spaced apart from the dam structure;
• and
• attaching a lid to the second substrate and enclosing the first substrate and the IC chip, the lid further attached to the dam structure and a top surface of the IC chip by a thermal interface material (TIM).