Bulk CMOS RF Switch With Reduced Parasitic Capacitance

An integrated circuit comprising:

• a base structure including an epitaxial layer formed on an upper surface of a semiconductor substrate, and
• at least one bulk CMOS RF switch formed in an active switch area of the base structure, said at least one bulk CMOS RF switch including:
• a Deep N-Well including a first N-type dopant at least partially disposed in a first epitaxial region of the epitaxial layer, said Deep N-well having a nominal concentration of said N-type dopant in the range of 1×1016 to 1×1018 atoms per cubic centimeter;
• a transistor element including:
• a P-Well including a first P-type dopant disposed in a second epitaxial region such that said P-Well is entirely located over a first epitaxial layer portion of the first epitaxial region,
• spaced-apart N-type source and drain contact diffusions formed by a second N-type dopant disposed in the P-Well adjacent to the upper epitaxial surface such that a channel region is formed by a portion of the P-Well located between the source and drain contact diffusions, and
• a gate structure located over the channel region;
• and
• an N-Tap element comprising a body region formed by a third epitaxial region of said epitaxial layer that is at least partially located over a second epitaxial layer portion of the first epitaxial region, said N-Tap element also including a third N-type contact diffusion formed by said second N-type dopant and disposed in the third epitaxial region adjacent to the upper epitaxial surface, wherein the body region comprises intrinsic epitaxial material having a resistivity in the range of 0.5 to 2 ohm-cm, and wherein said N-Tap element is configured such that said third N-type contact diffusion is separated from a second upper boundary region of the second epitaxial layer portion by said intrinsic epitaxial material forming said body region.