Semiconductor devices and fabrication methods thereof
AssigneesSemiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
InventorFei ZHOU
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Abstract
A method for fabricating a semiconductor structure includes forming a plurality of gate structures on the base substrate with each gate structure including a gate electrode and sidewall spacers on each aide surface of the gate electrode, forming source/drain doped regions in the base substrate on opposite sides of each gate structure, forming a sacrificial layer on side surfaces of each sidewall spacer, and performing a pre-amorphous ion implantation process on the source/drain doped regions using the sacrificial layer as a mask.
Claims21
A method for fabricating a semiconductor structure, comprising;
- forming a plurality of gate structures on the base substrate, wherein each gate structure includes a gate electrode and sidewall spacers on each side surface of the gate electrode;
- forming source/drain doped regions in the base substrate on opposite sides of each gate structure;
- forming a sacrificial layer on side surfaces of each sidewall spacer;
- and
- performing a pre-amorphous ion implantation process on the source/drain doped regions using the sacrificial layer as a mask.
gate structures is removed by a dry etching process.
A semiconductor structure, comprising:
- a base substrate;
- a plurality of gate structures formed on the base substrate, wherein each gate structure includes a gate electrode and sidewall spacers on each side surface of the gate electrode;
- a sacrificial layer formed on the sidewall spacers on each side surface of the gate electrode;
- and
- source/drain doped regions formed in the base substrate on opposite sides of each gate structure, wherein each of the source/drain doped regions includes an amorphous layer from an ion implantation using the sacrificial layer as a mask.
Dependencies are inferred from the claim text.