Forming interconnects with self-assembled monolayers

A method of forming an interconnect, the method comprising:

• forming a self-assembled monolayer (SAM) on a substrate;
• forming a protective layer on the SAM;
• forming an interconnect layer on the protective layer, the protective layer seeding the interconnect layer;
• and
• annealing the dielectric substrate.

A computing device comprising:

• a processor mounted on a substrate;
• a communications logic unit within the processor;
• a memory within the processor;
• and
• an integrated circuit, the integrated circuit comprising:
• a substrate comprising a layer of dielectric material forming a trench;
• a self-assembled monolayer (SAM) in contact with the dielectric material in the trench;
• an interconnect layer, the SAM residing between the dielectric material and the interconnect layer;
• and
• a protective layer residing between the SAM and the interconnect layer;
• wherein the dielectric material comprises silicon oxide.