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US 2018/0323081 A1Published application
Gettering layer forming method
AssigneeDisco Corporation
InventorsDaigo Shitabo, Seiji Harada, Hiroki Takeuchi
Life of this patent
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Abstract
A gettering layer forming method includes a coating step of applying a solution of metal salt to a back side of a wafer, and a diffusing step of heating the wafer after performing the coating step, thereby diffusing the metal salt on the back side of the wafer to form a gettering layer containing the metal salt on the back side of the wafer, in which the metal salt is diffused in the gettering layer.
Claims4
A gettering layer forming method for forming a gettering layer on a back side of a wafer having devices formed on a front side, the gettering layer forming method comprising:
- a coating step of applying a solution of metal salt to the back side of the wafer;
- and
- a diffusing step of heating the wafer after performing the coating step, thereby diffusing the metal salt on the back side of the wafer to form the gettering layer containing the metal salt on the back side of the wafer, wherein the metal salt is diffused in the gettering layer.
Dependencies are inferred from the claim text.