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US 2018/0323079 A1Published application
Methods for processing semiconductor wafers having a polycrystalline finish
AssigneeSunEdison Semiconductor Limited (UEN201334164H)
InventorsAlexis GRABBE, Hui WANG, Alex CHU
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Abstract
A method of processing a semiconductor wafer includes depositing a silicon layer on the semiconductor wafer. A first slurry is applied to the semiconductor wafer and the silicon layer is polished to smooth the silicon layer. A second slurry is applied to the semiconductor wafer. The second slurry includes a greater amount of a caustic agent than the first slurry.
Claims20
A method of processing a semiconductor wafer comprising:
- depositing a silicon layer on the semiconductor wafer;
- applying a first slurry to the semiconductor wafer;
- polishing the silicon layer to smooth the silicon layer;
- applying a second slurry to the semiconductor wafer, the second slurry including a greater amount of a caustic agent than the first slurry.
1 more element
A method of processing a semiconductor wafer comprising:
- depositing a silicon layer on the semiconductor wafer;
- positioning the semiconductor wafer on a first wafer polishing apparatus;
- polishing the silicon layer while the semiconductor wafer is positioned on the first wafer polishing apparatus such that a first portion of the silicon layer is removed;
- positioning the semiconductor wafer on a second wafer polishing apparatus;
- and
- polishing the silicon layer while the semiconductor wafer is positioned on the second wafer polishing apparatus such that a second portion of the silicon layer is removed.
3 more elements
A method of processing a semiconductor wafer comprising:
- depositing a silicon layer on the semiconductor wafer;
- cleaning the semiconductor wafer to facilitate growth on the silicon layer;
- and
- polishing the semiconductor wafer to smooth the silicon layer after the semiconductor wafer is cleaned.
1 more element
Dependencies are inferred from the claim text.